Samsung may have been earned a bad reputation over the past few months but that hasn’t stopped the company from helping Qualcomm develop its latest processor, the Snapdragon 835. Samsung Electronics are collaborating with Qualcomm by utilising its 10nm FinFET process in the new processor.
The 10nm FinFET process lets allows up to a 30 percent increase in area efficiency with a 27 percent improvement in performance or up to 40 percent less power consumption compared to the previous version. By using the 10nm FinFET process, the Snapdragon 835 will offer a smaller chip footprint, letting Original Equipment Manufacturers (OEMs) utilise more space. These process improvements, combined with a more advanced chip design, can create significant battery life enhancements. This, in tandem with Qualcomm’s new Quick Charge 4 technology, is the key to always keeping your battery topped up.
“We are pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using our 10nm FinFET technology. This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process technology.”
– Jong Shik Yoon, Executive VP & Head of Foundry Business, Samsung.
The Snapdragon 835 is currently in production and is expected to start shipping in commercial devices during the first half of 2017. The Snapdragon 835 is the successor of the Snapdragon 820/21 processor, which has over 200 designs in development.
